Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

115W Tc

Turn Off Delay Time  

40 ns

Current - Continuous Drain (Id) @ 25℃  

55A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2000

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

60V

Current Rating  

55A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

115W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

16.5m Ω @ 31A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1812pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

67nC @ 10V

Rise Time  

97ns

Vgs (Max)  

±20V

Fall Time (Typ)  

57 ns

Continuous Drain Current (ID)  

55A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

220A

Dual Supply Voltage  

60V

Recovery Time  

105 ns

Nominal Vgs  

4 V

Width  

4.826mm

Height  

8.77mm

Length  

10.668mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free